Qualified Resellers:

Asia, Mainland China: 
Beijing Zhiyuan Technology Co., Ltd. / General Manager Yu 
Contact: +86 15313699043/ +86 01064299328 
E-mail: yujiatian@aizyh.com 
Address: Building 6, No. 47 Ande Road, Dongcheng District, Beijing, China
America, North America:
Kelvin QIN Sales Director
Contact: +1 7788588278
E-mail: kelvin.qin@corepower.tw

Battery Management Products

Mainly used in lithium battery protection IC.
Single Cell Li-ion/Polymer Battery Protection IC:
CP01A (same as S8261 and DW01)
CP02B (CP01A +HVmos, same as DW02)

CP01A:

Core power technology CP01A 1cell protect IC has the same function as ABLIC S8261 and DW01A, and is used for the most basic lithium battery protection.
parameter

model

Overcharge detection Overcharge delayed release Over-discharge detection Over-discharge delayed release Discharge overcurrent detection Charging a 0V battery
Voltage Voltage Voltage Voltage Voltage V0CH
Vcu Vhc(Vcu-Vcd) Vdl Vhd(Vdl-Vdh) Viov1 V0CH
CP01A-4300A 4.300V+- 25mV 200mV+- 25mV 2.500V+-50mV 400mV+-50mV 0.150V+-15mV allow
CP01A-4275A 4.275V+- 25mV 200mV+- 25mV 2.500V+-50mV 400mV+-50mV 0.150V+-15mV allow
CP01A-4300B 4.300V+-100mV 200mV+-100mV 2.500V+-100mV 400mV+-100mV 0.150V+-30mV allow
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[wpfd_file wpfd_selected_file_random=”0.9045317272376968″ wpfd_selected_category_id_related=”68″ wpfd_selected_file_id=”1557″ wpfd_selected_file_title=”Circuit Design Electrical Reference Manual for CP01A” class_extra=”” id_extra=””]Circuit Design Electrical Reference Manual for CP01A[/wpfd_file]

CP02B:

Core power technology CP02B 1cell protect IC has the same function as DW02A, and has built-in HVMOS. It is recommended to use the current below 1 ampere, and the maximum moment does not exceed 2.5 amperes. Lithium battery protection.
parameter

model

Overcharge detection Overcharge delayed release Over-discharge detection Over-discharge delayed release Discharge overcurrent detection Charging a 0V battery
Voltage Voltage Voltage Voltage current V0CH
Vcu Vhc(Vcu-Vcd) Vdl Vhd(Vdl-Vdh) Iiov1 V0CH
CP02B-4300A 4.300V+- 25mV 200mV+- 25mV 2.500V+-50mV 400mV+-50mV 2.5A+-250mA allow
CP02B-4275A 4.275V+- 25mV 200mV+- 25mV 2.500V+-50mV 400mV+-50mV 2.5A+-250mA allow
CP02B-4300B 4.300V+-100mV 200mV+-100mV 2.500V+-100mV 400mV+-100mV 2.5A+-500mA allow
[wpfd_file wpfd_selected_file_random=”0.7359125551922994″ wpfd_selected_category_id_related=”68″ wpfd_selected_file_id=”1559″ wpfd_selected_file_title=”CP02B datasheet” class_extra=”” id_extra=””]CP02B datasheet[/wpfd_file]
[wpfd_file wpfd_selected_file_random=”0.7296509488326725″ wpfd_selected_category_id_related=”68″ wpfd_selected_file_id=”1556″ wpfd_selected_file_title=”CP02B Reference Manual” class_extra=”” id_extra=””]CP02B Reference Manual[/wpfd_file]

D-mode Gallium Nitride GaN Regulator Voltage Regulator Specifications: (6” wafer)

650V30A  MIS-HEMT。
650V20A     HEMT。
650V10A     HEMT。
650V 5A MIS-HEMT。
650V120mA   HEMT。
如果有不同電流規格要求,可以客製化。
Rds_on 是 200mΩ (0.2 Ohm)。
本公司提供的氮化鎵GaN wafer 生產Fab工廠是在台灣。
專有名詞和縮寫如下,這有助於我們了解GaN規格和用途。
HEMT : High Electron Mobility Transistors 
MIS-HEMT : Metal-Insulator-Semiconductor 
          -High Electron Mobility Transistors 

E-mode GaN : Enhancement-mode GaN
D-mode GaN : Depletion-mode GaN
2DEG: two dimensional electron gas (two-dimensional electron gas channel)

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